Abstract:200 nm thick InxAl1-xN epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain, surface morphology and crystalline quality of the InxAl1-xN were evaluated by high resolution X-ray diffraction (HRXRD) measurements, scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect, as while as the influences of indium and the GaN templates with different dislocation densities on the quality of InxAl1-xN epilayers were discussed. It is found that the crystalline quality was quite good when InxAl1-xN around lattice matched to GaN and degraded when InxAl1-xN under relatively large tensile or compressive strain accompanied by formation of crack or pits of reverse pyramid. The micro-morphology observations of InxAl1-xN layers with different indium compositions showed that the formation of dislocations was related with indium and compressive strain in InxAl1-xN layers. Furthermore, more pits were observed in lattice matched InxAl1-xN layers on GaN template of high dislocation density than samples on GaN template with low dislocation density GaN. It is believed that threading dislocations induced by GaN template might be a part of origin of the pits, and modulate the effect of compressive stain on the InxAl1-xN quality.

Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Depth-Dependent Tetragonal Distortion Study of Algan Epilayer Thin Film Using Rbs and Channeling Technique

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Determination of Tetragonal Distortion of Al0.69In0.09Ga0.22N/GaN Heterostructure by RBS/C and HRXRD

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Chemical Composition Dependent Elastic Strain in Algan Epilayers

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Determination of Al Composition in Strained AlGaN Layers

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition