Abstract:This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials.

Chemical Composition Dependent Elastic Strain in Algan Epilayers

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Elastic strain in InGaN and AlGaN layers

Determination of Al Composition in Strained AlGaN Layers

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Depth-Dependent Tetragonal Distortion Study of Algan Epilayer Thin Film Using Rbs and Channeling Technique

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Mechanism of Stress-Driven Composition Evolution During Hetero-Epitaxy in a Ternary AlGaN System

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Effect of Stress on the Al Composition Evolution in AlGaN Grown Using Metal Organic Vapor Phase Epitaxy