Abstract:Low growth rates in AlScN/GaN heterostructures grown by metal‐organic chemical vapor cause the formation of linearly graded interlayers and degradation of the electrical characteristics. Growth rates are enhanced with novel Sc precursors, and high interface abruptness and homogeneous layers are achieved. Structural quality strongly affects the performance of the 2D electron gas, which is the core of high‐electron‐mobility transistors. Aluminum scandium nitride barrier layers increase the available sheet charge carrier density in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of high‐frequency amplifiers and high voltage switches. Growth of AlScN by metal‐organic chemical vapor deposition is challenging due to the low vapor pressure of the conventional Sc precursor Cp3Sc, which induces low growth rates of AlScN and leads to thermally‐induced AlScN/GaN‐interface degradation. In this work, novel Sc precursors are employed to reduce the thermal budget by increasing the growth rate of the AlScN layer. The AlScN/GaN interfaces are investigated by high‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, time‐of‐flight secondary ion mass spectrometry, capacitance–voltage, current–voltage and temperature‐dependent Hall measurements. Linearly graded interlayers with strain‐induced stacking faults, edge, and screw dislocations form at the AlScN/GaN interface at growth rates of 0.015 nms−1. Growth rates of 0.034 nms−1 and higher allow for abrupt interfaces, but a compositional grading in the barrier remains. Homogeneous barrier layers can be achieved at growth rates of 0.067 nms−1 or by growing an AlN interlayer. The electrical properties of the heterostructures are sensitive to Sc accumulations at the cap/barrier interface, residual impurities from precursor synthesis, and surface roughness. This study paves the way for high‐performing devices.

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Understanding Interfaces in AlScN/GaN Heterostructures

X-ray Diffraction Studies on AlGaN/GaN Heterostructures

Study on Structure of AlGaN on AlN Interlayer by Synchrotron Radiation XRD and RBS

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Study of moiré fringes at the interface of GaN/α-Al2O3 (0 0 0 1)