Abstract:The correlation between the resistivity of an undoped GaN/Al 2 O 3 interfacial layer and in-situ reflectance spectrum in metalorganic chemical vapor deposition and the mechanism of this correlation were investigated. The first minimum reflectance during the initial high-temperature GaN growth was found to be a good indicator of the resistivity of the GaN buffer. The background electron concentration and mobility were both higher in the samples with higher indicative reflectance at that point. The resistivity of the GaN buffer layer was predominantly determined by an ∼0.25-µm-thick layer near the GaN/Al 2 O 3 interface. Atomic force microscope (AFM) and high-resolution x-ray diffraction (HRXRD) results showed that the samples with higher indicative reflectance had smaller sized but higher density nuclei before the high-temperature GaN growth and lower screw threading dislocation (TD) density in the initially grown GaN. The difference in the background electron concentration and mobility of the interfacial layer was related to the relatively higher concentration of the O and Al diffused from Al 2 O 3 , which is also dependent on the size and density of the nuclei. These differences were found not to affect the structural and electrical properties or the surface morphology of AlGaN/GaN high electron-mobility transistors (HEMTs, except for the buffer conduction) when the GaN buffer is thick enough (e.g., ∼2.5 µm).

Study of moiré fringes at the interface of GaN/α-Al2O3 (0 0 0 1)

Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

Study Of Moire Fringes At The Interface Of Gan/Alpha-Al2o3(0001)

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Microstructure analysis on buffer layer in GaN/MgAl2O4

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure

Correlation of In-Situ Reflectance Spectra and Resistivity of GaN/Al 2 O 3 Interfacial Layer in Metalorganic Chemical Vapor Deposition

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Moiré pattern at graphene/Al (111) interface: Experiment and simulation

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Application of moiré fringes in investigations of subsurface imperfections — a study of dislocations and strain fields under the reconstructed surface layer of Au(001) by scanning tunneling microscopy

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(0 0 1) substrates

Microstructure and Physical Properties of GaN Films on Sapphire Substrates