Microstructure analysis on buffer layer in GaN/MgAl2O4

Peide Han,Haifeng Yang,Ze Zhang,Shukun Duan,Xuegong Teng

1998-01-01

Abstract:GaN buffers in (0001) GaN/(111) MgAl2O4 heterostructure grown by metallorganic chemical vapor deposition (MOCVD) were studied by high resolution electron microscopy (HREM). It is found that the primary deposition on the substrate at a low temperature is a 5 nm thick island-sublayer with hexagonal structure.

What problem does this paper attempt to address?

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

P Chen,B Shen,JM Zhu,ZZ Chen,YG Zhou,SY Xie,R Zhang,P Han,SL Gu,YD Zheng,SS Jiang,D Feng,ZC Huang

DOI: https://doi.org/10.1088/0256-307x/17/3/024

2000-01-01

Chinese Physics Letters

Abstract:Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Kai Chen,Yachao Zhang,Jincheng Zhang,Xing Wang,Yixin Yao,Jinbang Ma,Yue Hao

DOI: https://doi.org/10.1016/j.ceramint.2022.08.176

IF: 5.532

2022-12-01

Ceramics International

Abstract:High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC substrate. By analyzing growth modes of GaN films on AlN buffer layers with different thicknesses, it is revealed that film-forming point of GaN grown on AlN buffer increases with the increase in AlN buffer thickness. Accordingly, new growth model of GaN on AlN buffer was proposed, which shows that there is an optimal matching value between Ga source flow rate and AlN thickness when GaN is grown on AlN buffer of different thicknesses. Under optimal conditions, AlGaN/GaN/AlN heterostructures with 120 nm thin GaN channel layer and thick AlN buffer show excellent carrier-limited domain, high crystalline quality, and good transport properties. Results in this work would be useful for preparing high-quality heterostructures on AlN buffer and high electron mobility transistor (HEMT) devices. Moreover, these findings can also be applied to the growth of other hyperfine structures (quantum wells, superlattices, and digital alloys) in the future.

materials science, ceramics
Al diffusion in GaN buffer layer during the growth of GaN film

Shu-You Li,Jing Zhu

DOI: https://doi.org/10.1016/S0022-0248(99)00131-1

IF: 1.8

1999-01-01

Journal of Crystal Growth

Abstract:The structure, composition and chemical bonding state of the buffer layer produced during the growth of GaN single crystal film were studied by using analytical electron microscopy. It was found that the buffer layer is a compound containing both GaN and AlN (or AlxGa1−xN) although Al was not introduced during the crystal growth. This result indicates that aluminum had diffused from Al2O3 substrate to the buffer layer and some AlN or AlxGa1−xN microcrystals had been formed in the buffer layer. These microcrystals are very important for releasing the stress near the interface.
Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

Z.Z Chen,B Shen,Z.X Qin,J.M Zhu,R Zhang,Y.D Zheng,G.Y Zhang

DOI: https://doi.org/10.1016/S0921-4526(02)01270-X

2002-01-01

Abstract:In this paper, the interface structure of GaN/α-Al2O3 (0001) is studied by high-resolution transmission electron microscopy on tilted samples around the 〈112̄0〉Al2O3 axis. Sets of moiré fringes are observed. There are many disparities, such as contrast, period, tilt angle, and so on, among these moiré fringes located in different regions. These fringes represent magnifying images of the plane distances of (11̄00)GaN and the tilts of c-axis of GaN crystallites to that of the substrate. According to these results, the growth mechanism of GaN buffer layer at the interface is discussed.
Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

DP Yu,LS Chen,GY Zhang,YZ Tong,ZJ Yang,SX Jin,LP You,ZQ Liu,Z Zhang

DOI: https://doi.org/10.4028/www.scientific.net/ddf.148-149.122

1997-01-01

Defect and Diffusion Forum

Abstract:The microstructure feature of the multilayered Gallium Nitride (GaN) films grown by using metalorganic vapor phase epitaxy (MOVPE) method, was analyzed by means of cross-sectional transmission electron microscopy (TEM). A GaN buffer layer predeposited at low temperature of 550 degrees C on the (0001) surface of the sapphire was revealed to be predominantly of a cubic phase (c-GaN). Hexagonal (h-GaN) epitaxial film was grown on the (111) surface of the c-GaN buffer layer in a subsequent high temperature deposition. A large number of domain structure was observed in the GaN epilayer, with their displacement vector parallel to the [0001] c axis.
Study of moiré fringes at the interface of GaN/α-Al2O3 (0 0 0 1)

Z.Z Chen,B Shen,Z.X Qin,J.M Zhu,R Zhang,Y.D Zheng,G.Y Zhang

DOI: https://doi.org/10.1016/S0921-4526(02)01270-X

2002-01-01

Abstract:In this paper, the interface structure of GaN/α-Al2O3 (0001) is studied by high-resolution transmission electron microscopy on tilted samples around the 〈112̄0〉Al2O3 axis. Sets of moiré fringes are observed. There are many disparities, such as contrast, period, tilt angle, and so on, among these moiré fringes located in different regions. These fringes represent magnifying images of the plane distances of (11̄00)GaN and the tilts of c-axis of GaN crystallites to that of the substrate. According to these results, the growth mechanism of GaN buffer layer at the interface is discussed.
Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Peide Han,Haifeng Yang,Hui Yang,Yaowang Lin,Ze Zhang,Xinfeng Li,Zengqi Zhou

1999-01-01

Abstract:A cubic GaN/GaAs heterostructure grown by molecular beam epitaxy (MBE) was studied by transmission electron microscopy. It is observed that a lot of {111} planar defects (stacking faults and microtwins) distributed asymmetrically in this GaN film and misfit dislocations lay non-optimally at the interface. The mechanism of forming planar defects is discussed.
Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Hongtao Li,Luo, Yi,Wang, Lai,Xi, Guangyi

DOI: https://doi.org/10.1109/inow.2007.4302904

2007-01-01

Abstract:Microstructure evolution in MOVPE-grown GaN with different low-temperature-buffer annealing time was investigated. Low-temperature-buffer annealing process was found to effectively modulate the in-plane and out-of-plane misorientation of mosaic blocks, and simultaneously diminish the in-plane crystallite size.
Study Of Moire Fringes At The Interface Of Gan/Alpha-Al2o3(0001)

Zz Chen,B Shen,Zx Qin,Jm Zhu,R Zhang,Yd Zheng,Gy Zhang

DOI: https://doi.org/10.1016/S0921-4526(02)01270-X

2002-01-01

Abstract:In this paper, the interface structure of GaN/alpha-Al2O3 (0 0 0 1) is studied by high-resolution transmission electron microscopy on tilted samples around the <1 1 (2) over bar 0 > (Al2O3) axis. Sets of moire fringes are observed. There are many disparities, such as contrast, period, tilt angle, and so on, among these moire fringes located in different regions. These fringes represent magnifying images of the plane distances of (1 (1) over bar 0 0)(GaN) and the tilts of c-axis of GaN crystallites to that of the substrate. According to these results, the growth mechanism of GaN buffer layer at the interface is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Zhiwen Liang,Ye Yuan,Pengwei Wang,JunJie Kang,Qi Wang,Guoyi Zhang

DOI: https://doi.org/10.1088/1361-6463/aca106

2022-01-01

Abstract:The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively by a variety of techniques including atomic force microscope, high resolution x-ray diffraction, Raman and x-ray photoelectron spectroscopy characterizations. It exhibited that the AlN buffer deposited by using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences the characteristics of GaN epilayer, for example leading to poor surface morphology, high dislocation density, and large compressive stress. This study demonstrated the effect of oxygen impurities on GaN growth and has an important guiding significance for the growth of high-quality III-nitride related materials.
Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

J. Song,F. J. Xu,Z. L. Miao,Y. Wang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1063/1.3246866

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:The microstructure and electrical properties of Al0.25Ga0.75N/GaN heterostructures with various AlN thicknesses have been investigated. An optimum thickness of AlN interlayer can remarkably improve the microstructure of Al0.25Ga0.75N barrier with the most uniform strain and the lowest density of threading dislocations, leading to the highest Hall mobility of the two-dimensional electron gas in the heterostructures. Transmission electron microscopy images show that the AlN interlayer with an optimum thickness can make the threading dislocations bend and be annihilated with each other in the vicinity of the heterointerface due to the larger mismatch strain between AlN interlayer and GaN. We believe that such behavior reduces the local strain and improves the uniformity of the strain in the AlxGa1−xN barrier, and thus depresses the scattering induced by the fluctuations of the piezoelectric interface charge owing to the nonuniformity of piezoelectric polarization field in AlxGa1−xN/GaN heterostructures.
Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

C. X. Xu,W. Chen,X. H. Pan,S. S. Chen,Z. Z. Ye,J. Y. Huang

DOI: https://doi.org/10.1016/j.jcrysgro.2016.06.005

IF: 1.8

2016-01-01

Journal of Crystal Growth

Abstract:In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.
Characterization for Microstructure of GaN on Si Substrates

江若琏,陈鹏,赵作明,沈波,张荣,郑有炓

DOI: https://doi.org/10.3969/j.issn.1004-5929.2003.04.009

2003-01-01

Abstract:Using AlN and anodic alumina as the respective buffer layers, GaN films on Si (111) were grown by rapid thermal process/low pressure-metalorganic chemical vapor deposition (RTP/LP-MOCVD). Crystal structures of the GaN epilayers were characterized by X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering. Results indicate that AlN is a good buffer material between Si and GaN.
Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

XH Luo,RM Wang,XP Zhang,HZ Zhang,DP Yu,MC Luo

DOI: https://doi.org/10.1016/j.micron.2004.01.010

IF: 2.381

2004-01-01

Micron

Abstract:Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO(2) amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO(2)/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains ( approximately 100 nm in size) grown along [0001] direction with about 20 degrees between the (1l00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer.
Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Lisen Cheng,Ze Zhang,Guoyi Zhang,Zhijian Yang

DOI: https://doi.org/10.1016/s0022-0248(98)00383-2

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:Microstructures of GaN films grown by low pressure metalorganic vapor-phase epitaxy on (0 1 (1) over bar 2) sapphire substrates were investigated using transmission electron microscopy. The crystallographic structure of the GaN buffer layer grown at 550 degrees C was uniquely hexagonal. Grain boundaries and stacking faults in the as-grown buffer layer are much less than those in the buffer layer grown on (0 0 0 1) sapphire substrates. Defects in the as-grown epitaxial layers are predominantly edge type dislocations with Burgers vector b = 1/3 [1 (1) over bar 0 0]. No screw dislocations or domain boundaries in the epilayer were observed in the as-grown samples. (C) 1998 Elsevier Science B.V. All rights reserved.
TEM Analysis on GaN/AlGaN SLS

Chen Weihua,Hu Xiaodong,Zhang Bei,Li Zilan,Pan Yaobo,Hu Chengyu,Wang Qi,Lu Yu,Lu Min,Yang Zhijian,Zhang Guoyi

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.z1.008

2005-01-01

Chinese Journal of Semiconductors

Abstract:120 periods of GaN/Al0.14Ga0.86N superlattice structure (SLS) are grown by metal-organic chemical vapor deposition(MOCVD) on Al2O3(0001) single crystal substrates.The technology of laser lift-off is effectively used to prepare specimens for cross-section TEM.Transmission electron microscopy (TEM) reveals the good quality of undoped AlGaN/GaN SLS,and the periods of crystal lattice as well.Electron diffraction also shows the good quality of AlGaN/GaN SLS.In TEM images we find the assemble phenomenon of Al atoms or Ga atoms.These areas would induce new dislocations if the stress reaches the critical value.Most of the thread dislocations in GaN buffer layer shape like arcs,resulting in epitaxial growth.
Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Lisen Cheng,Ze Zhang,Guoyi Zhang,Zhijian Yang

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:Microstructures of GaN films grown by low pressure metalorganic vapor-phase epitaxy on (0 1 1 2) sapphire substrates were investigated using transmission electron microscopy. The crystallographic structure of the GaN buffer layer grown at 550°C was uniquely hexagonal. Grain boundaries and stacking faults in the as-grown buffer layer are much less than those in the buffer layer grown on (0 0 0 1) sapphire substrates. Defects in the as-grown epitaxial layers are predominantly edge type dislocations with Burgers vector b = 1/3 〈1 1 0 0〉. No screw dislocations or domain boundaries in the epilayer were observed in the as-grown samples. © 1998 Elsevier Science B.V. All rights reserved.
Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Xu Yue-sheng

Abstract:GaN epitaxial layers were grown on Si(111) substrates with AlN buffer layers at different growth temperature. X-ray diffraction(DCXRD) and scanning electron microscope(SEM) were used as analysis tool to reveal the relation between growth temperature of buffer layer and epilayer surface morphology. The “pits” on epitaxial surface and the relation with buffer growth temperature were explained through these analysis.It indicates that the buffer growth temperature influences surface morphology through nucleation seed density and dimension dropped on the Si(111) substrate at initial time of buffer growth. When the buffer temperature was low, nucleation seeds were frozen on the surface of substrate and could not move to neighboring seeds. Nucleation seeds density was high and dimension was small. When the buffer temperature was high, the nucleation seeds had enough energy to merge with other seeds and density of seeds was low and dimension was big. This nucleation difference caused the epilayer morphology difference. Through this analysis, one growth model was created to guide the later experiments.

Engineering,Materials Science,Physics
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

Ding-Yuan Chen,Kai-Hsin Wen,Mattias Thorsell,Martino Lorenzini,Hans Hjelmgren,Jr-Tai Chen,Niklas Rorsman

DOI: https://doi.org/10.1002/pssa.202200496

2022-10-08

Abstract:The 2DEG confinement on HEMT heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal organic chemical vapor deposition (MOCVD) with thin GaN channel thicknesses, ranging from 250 nm to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm‐1 and maximum saturated drain currents above 1 A mm‐1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering (DIBL) of only 20 mV V‐1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm‐1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm‐1 and associated power‐added efficiencies of 56 and 40 % are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure. This article is protected by copyright. All rights reserved.
Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Chen Zhizhong,Zhang Rong,Zhu Jianming,Shen Bo,Zhou Yugang,Chen Peng,Li Weiping,Shi Yi,Gu Shulin,Zheng Youdou

DOI: https://doi.org/10.1557/proc-595-f99w3.50

2000-01-01

MRS Internet Journal of Nitride Semiconductor Research

Abstract:Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E 2 mode is broadened from 5 cm −1 to 7 cm −1 . A “zippers” structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.

Microstructure analysis on buffer layer in GaN/MgAl2O4

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Al diffusion in GaN buffer layer during the growth of GaN film

Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Study of moiré fringes at the interface of GaN/α-Al2O3 (0 0 0 1)

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Study Of Moire Fringes At The Interface Of Gan/Alpha-Al2o3(0001)

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Characterization for Microstructure of GaN on Si Substrates

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

TEM Analysis on GaN/AlGaN SLS

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

Microstructure and Physical Properties of GaN Films on Sapphire Substrates