Abstract:Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × 10 17 cm −3 , and mobility of 137.1 cm 2 /Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices.

Al diffusion in GaN buffer layer during the growth of GaN film

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Influence of High-Temperature Ain Buffer Thickness on the Properties of Gan Grown on Si(111)

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Effects of AlN Buffer on the Physical Properties of GaN Films Grown on 6H-Sic Substrates

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates

Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

The influence of AlN buffer layer thickness on the properties of GaN epilayer

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Effects of Step-graded AlxGa1-xN Buffer on Properties of GaN Films

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Growth of GaN on Si(111) by inserting δAl/AlN buffer layer

Morphology of GaN film on Si(111) substrate using AlN buffer

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Influence of Double Aln Buffer Layers on the Qualities of Gan Films Prepared by Metal-Organic Chemical Vapour Deposition

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates