Abstract:With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and alpha-Al2O3 substrate, ZnAl2O4/alpha-Al2O3 Complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/alpha-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4degrees. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Epitaxial growth of GaN film on Si substrate

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Growth of Wurtzite GaN Films on Α-Al2o3 Substrates Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate