Abstract:ZnO,a wide direct-gap semiconductor,attracts as much attention as GaN in optoelectronics research field.Recently,there has been a great progress in the growth of ZnO thin films.But applicable ZnO optoelectronic devices have not been fabricated yet,mainly due to that sufficiently effective p-type ZnO thin films have not been obtained up to now.To solve the p-type doping problems,it is necessary to grow higher quality ZnO thin films.One of the key issues to grow high quality ZnO thin films is to find a lattice matched substrate.GaN and ZnO have close lattice constant and the mismatch of them is less than(2%,so) GaN is the suitable substrate for the growth of ZnO epitaxial layers.At present,the technique of growing high quality GaN films on Al_2O_3substrate has developed mature through the research of more than ten years,it is a feasible method(to use) the GaN epilayer as the buffer layers on other substrates for the growth of ZnO epitaxial layers.ZnO films used in this study were grown by a home-built vertical atmospheric pressure MOCVD system.The GaN/Al_2O_3 templates were fabricated by a low-pressure MOCVD system(Thomas Swan,CCS).The thickness of the GaN layer was about 3 mm.We used deionized water and Zn(C_2H_5)_2 as the O and Zn sources,respectively,and nitrogen as the carrier gas.The thickness of the ZnO layer is 2 μm.ZnO epilayer characteristics were investigated by AFM,DCXRD and PL.XRD spectra showed that the threading dislocation density of the ZnO films is in the order of 10~8 cm~(-2),which is comparable to device-level GaN films.The ZnO films showed very bright near band-edge luminescence is at 3.263 eV at room temperature and the deep-(level) emission is quite weak in the whole spectrum.The absence of the deep-level emission peak indicates that the ZnO films are of excellent optical quality and have few interior defects.From the low temperature PL spectrum,the domination of free exciton and the appearance of its two replicas strongly further prove the high qua-(lity) of the ZnO films.This superior optical feature is an indication of the potential of atmospheric pressure MOCVD for ZnO growth on epi-GaN/Al_2O_3 templates.

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Metalorganic Chemical Vapour Deposition of GaN Layers on ZnO Substrates Using Α-Al2o3as a Transition Layer

Metalorganic Chemical Vapor Deposition of GaN and InGaN on ZnO Substrate Using Al2O3 As a Transition Layer

Metalorganic Chemical Vapour Deposition Of Gan Layers On Zno Substrates Using Alpha-Al2o3 As A Transition Layer

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

ZnO Thin Films Grown on GaN/Al2O3 Templates by Atmospheric Pressure MOCVD

Al 2 O 3 As a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Study on the Growth of Lattice-matched ScAlMgO_4 Substrates for GaN and ZnO-based Film Epitaxy

A1 2 O 3 as a Transition Layer for GaN and InGaN growth on ZnO by MOCVD

Growth and Properties of ZnO Film Grown on AlN Buffer Layer by PLD

γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy

High-quality ZnO/GaN/Al2O3 Heteroepitaxial Structure Grown by LP–MOCVD