Abstract:High-Al-content AlxGa1-xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AIN (HT-AIN) interlayer by metal organic chemical vapor deposition (MOCVD). The best crystalline quality, among these AlxGa1-xN alloys, can be obtained for an AIN mole fraction x = 0.55, where the full-width at half-maximum of the Al0.55Ga0.45N (0002) diffraction peak was measured to be 259 arcsec by high resolution X-ray diffraction (HRXRD). The screw threading dislocation (TDs) density was 2 x 10(8) cm(-2) evaluated by transmission electron microscope (TEM), which agreed with the calculations from Williamson-Hall plots. Moreover, cross-sectional TEM indicated that the HT-AIN interlayer could sufficiently reduce the threading dislocations (TDs) through generation of V trenches in the HT-AIN interlayer, since the TDs propagated along the V trenches, then bent into basal planes and annihilated with other dislocations. The study of optical properties indicated that obvious S-shape of temperature dependence on emission energy was observed for Al0.55Ga0.45N layers, which was attributed to exciton localization with energy (E-IOC) similar to 14.95 meV at 10 K resulting from potential fluctuation and band tail states. The time-resolved photoluminescence (TRPL) curves showed a bi-exponential decay at low temperature. The fast decay time implied the presence of the localized excitons enhancing radiative recombination, while the quite slow one was due to the dominance of trapping mechanisms originating from cation vacancy complexes and the V-III-related complexes. (C) 2016 Elsevier Ltd. All rights reserved.

Synthesis of high Al content Al x Ga 1− x N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

Composition and Bandgap Control of AlxGa1−xN Films Synthesized by Plasma-Assisted Pulsed Laser Deposition

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Morphology-controlled synthesis and structural characterization of ternary AlxGa1−xN nanostructures by chemical vapor deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

Synthesis of High-Quality AlN Films on (la,sr) (al,ta)o3 Substrates by Pulsed Laser Deposition

Synthesis Of Homogeneous And High-Quality Gan Films On Cu(111) Substrates By Pulsed Laser Deposition

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Growth and Characterization of Ternary Algan Alloy Nanocones Across the Entire Composition Range

Nitridation Effect of the Α-Al2o3 Substrates on the Quality of the GaN Films Grown by Pulsed Laser Deposition

Two-Dimensional III-Nitride Alloys: Electronic and Chemical Properties of Monolayer Ga(1-x)AlxN