Abstract:The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (111) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (111) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (111) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within similar to 321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes. (C) 2014 Elsevier B. V. All rights reserved.

Synthesis Of Homogeneous And High-Quality Gan Films On Cu(111) Substrates By Pulsed Laser Deposition

Quality-enhanced GaN Epitaxial Films Grown on (la, Sr) (al, Ta)O3 Substrates by Pulsed Laser Deposition

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Low-temperature Direct Growth of GaN Epitaxial Film on Cu Substrate with Sharp and Abrupt Hetero-Interface

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Epitaxial Growth of Homogeneous Single-Crystalline Aln Films on Single-Crystalline Cu (111) Substrates

Epitaxial Growth and Its Mechanism of Gan Films on Nitrided Ligao2(001) Substrates by Pulsed Laser Deposition

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition

Nitridation Effect of the Α-Al2o3 Substrates on the Quality of the GaN Films Grown by Pulsed Laser Deposition

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Epitaxial growth of GaN films on lattice-matched ScAlMgO4 substrates

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition