Abstract:The preparation of gallium nitride (GaN) film materials has significant importance in the semiconductor and thermoelectric sectors, serving as essential core materials for chips, power supply, and communication applications. The production of GaN thin films with reduced defect density has emerged as a significant and continuous subject of research. This work investigated the deposition process of GaN thin films on an aluminum nitride nanopattern substrate via molecular dynamics simulation. A comparison was made between the deposition process on the nanopatterned and unpatterned substrates. Additionally, the impact of the substrate temperature and nanopillar radius on the quality of the thin film was examined. Results demonstrate that the use of a nanopillar pattern on the substrate facilitates the acquisition of the deposited film with a larger number of wurtzite structures and a reduced presence of dislocations. In contrast to the persistent and extensive dislocations formed in the thin films on an unpatterned substrate, the dislocations present in the thin films on a patterned substrate exhibit shorter lengths and more complexity. By appropriately elevating the temperature of the substrate, it is possible to effectively decrease the complexity of the atomic structure and enhance the thin film density. The correlation between the stress and the temperature of the thin film deposited on the patterned substrate is weak. The deformation of nanopillars with a too small radius can cause the deposited atoms to move into the nanovoid, aggravating the irregularity of the thin film surface and the volume of defects. Moreover, the excessive size of the nanopillar at which the surface area of the substrate approaches that of an unpatterned substrate can increase the occurrence of dislocations in the deposited film. This observation implies that the nanovoid ratio inside the nanopillar has a substantial impact on the deposition quality of the thin film. This study focuses on the deposition of GaN films on substrates with nanopatterns at the nanoscale, assesses the impact of nanopatterning degree on the growth quality of film, and acquires data on the temperature range and structural characteristics of high-quality films exhibiting high density and few dislocations.

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Quality-enhanced GaN Epitaxial Films Grown on (la, Sr) (al, Ta)O3 Substrates by Pulsed Laser Deposition

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Epitaxial Growth and Its Mechanism of Gan Films on Nitrided Ligao2(001) Substrates by Pulsed Laser Deposition

Nitridation Effect of the Α-Al2o3 Substrates on the Quality of the GaN Films Grown by Pulsed Laser Deposition

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Epitaxial Growth of High Quality AlN Films on Si Substrates

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Quality-Enhanced Aln Epitaxial Films Grown on Al Substrates by Two-Step Growth

Synthesis Of Homogeneous And High-Quality Gan Films On Cu(111) Substrates By Pulsed Laser Deposition

Study on Growth Quality of GaN Deposition on Nanopillar-Patterned Substrates: Microstructure Characterization and Crystalline Quality Optimization

Nucleation Layer Design for Growth of a High-Quality AlN Epitaxial Film on a Si(111) Substrate

Epitaxial growth of GaN films on lattice-matched ScAlMgO4 substrates