Abstract:GaN has shown great potential for high-power high-frequency electronic devices and short-wavelength optical devices. To integrate GaN-based optoelectronic devices with Si-based electronic devices and reduce the cost, it is desirable to grow epitaxial GaN thin films and device structures on the Si substrate. However, a proper buffer layer is essential for epitaxial growth of GaN films on Si substrate due to large mismatch between them in the area of lattice constant, thermal expansion coefficient and chemistry feature. In the present work, the growth of AlN buffer layer was studied. Wurtzite aluminum nitride thin films were grown on Si (111) and Si (100) substrates using reactive sputtering deposition under different discharge powers. X-ray diffraction (XRD) patterns showed that full width at half maximum (FWHM) of AlN (0002) peak grown on Si (111) substrates was smaller than that grown on Si (100) substrates. Vibrational characterization by Fourier transform infrared spectroscopy (FTIR) revealed that the stress in the AlN films deposited on Si (111) substrates was also smaller than that deposited on Si (100) substrates. For Si (100) substrates, the large lattice mismatch between AlN (0001) and Si (100) is a main contribution to the large strain in the formed films. For Si (111) substrates, the strain in the films deposited on Si (111) largely depends on the discharge power in sputtering, and the strain due to defects and thermal mismatch contributes largely to the residual strain in the deposited films.

Epitaxial Growth of High Quality AlN Films on Si Substrates

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Growth of High-Quality AlN Epitaxial Film by Optimizing the Si Substrate Surface

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy