Abstract:Aluminum nitride (AlN) is an ideal material for the preparation of devices such as deep ultraviolet light-emitting diodes (UV-LEDs) and vacuum detectors because of its wide forbidden bandwidth and excellent physical properties. The quality of AlN films determines the durability and reliability of these devices, and the gas flow rate is an important process parameter that determines the quality of the films. in this paper, metal nitride vapor phase epitaxy (MNVPE) was used to prepare AlN films on sapphire substrates. Firstly, based on the three-dimensional (3D) computational fluid dynamics (CFD) model, the film growth rate and uniformity were investigated at different V/III ratios, and the film quality was best at V/III = 4420. The flow field was analyzed by continuing to adjust the flow rates of Ar and N2 for different gas flow rates at the same V/III ratio, and the results showed that the appearance of vortices had a great influence on the subsequent surface morphology. The crystalline quality, surface morphology, root mean square roughness, and residual stress of the AlN films grown at different gas flow rates were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and Raman spectroscopy. The results showed that the best surface roughness, crystalline quality, and the lowest residual stress were obtained when the Ar flow rate was 0.25 SLM and the N2 flow rate was 2.5 SLM. The best root-mean-square roughness and crystalline quality obtained under (0002) symmetric reflection conditions were 11 nm and 357 arcsec, respectively.

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

Three-Step Growth Optimization of AlN Epilayers by MOCVD

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Epitaxial Growth of High Quality AlN Films on Si Substrates

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates