Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

chen changqing,yang li,shengchang chen,wu tian,senlin li,wang hu,zhang jin,wu zhihao,fang yanyan,jiangnan dai

2012-01-01

Abstract:Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire. The results show that the crystal quality can be significantly improved by the this technique.

What problem does this paper attempt to address?

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Jiaming Wang,Fujun Xu,Chenguang He,Lisheng Zhang,Lin Lu,Xinqiang Wang,Zhixin Qin,Bo Shen

DOI: https://doi.org/10.1038/srep42747

IF: 4.6

2017-01-01

Scientific Reports

Abstract:Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 arcsec, indicating a great improvement of the tilting feature of the grain structures in the AlN epilayer. More importantly, there is no inversion domains (IDs) found in the AlN epilayers, which clarifies that optimal sapphire nitridation is promising in the growth of high quality AlN. It is deduced that the different interfacial atomic structures caused by various pretreatment conditions influence the orientation of the AlN nucleation layer grains, which eventually determines the tilting features of the AlN epilayers.
Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

LI Yanjiong,FANG Liang,ZHA Hong,ZHA Wenbo,ZHOU Yong,YANG Xiaobo,ZHOU Xun

DOI: https://doi.org/10.16818/j.issn1001-5868.2010.06.019

2010-01-01

Abstract:Combining the technique of AlN nucleation buffer layer with the method of NH3 flow rate modulated buffer layer,high-quality thick AlN templates with atomically flat surface were grown on(0001)sapphire substrate by metal organic chemical vapor deposition(MOCVD).The scanning electronic microscope(SEM),the atomic force microscope(AFM)and high-resolution X-ray diffractometer(XRD)were used to characterize the samples.Experimental results show the surface of the AlN templates is crack-free,the root mean square(RMS)value is 0.35 nm,and the full-width at half-maximums(FWHMs)of X-ray rocking curves(XRC)for(0002)plane(ω-scan)and(1012)plane(ω-scan)are 37 arcsec and 712 arcsec,respectively.The dislocation behavior,stress and growth mode of the AlN templates are investigated in detail.
High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Lisheng Zhang,Fujun Xu,Jiaming Wang,Chenguang He,Weiwei Guo,Mingxing Wang,Bowen Sheng,Lin Lu,Zhixin Qin,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1038/srep35934

IF: 4.6

2016-01-01

Scientific Reports

Abstract:We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (10 2) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.
Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

X. Zhang,F. J. Xu,J. M. Wang,C. G. He,L. S. Zhang,J. Huang,J. P. Cheng,Z. X. Qin,X. L. Yang,N. Tang,X. Q. Wang,B. Shen

DOI: https://doi.org/10.1039/c5ce01159k

IF: 3.756

2015-01-01

CrystEngComm

Abstract:Epitaxial growth of AlN films on c-sapphire using a multilayer structure has been investigated by metal-organic chemical vapor deposition adopting multiple alternation cycles of low- and high-temperature (LT-HT) growth. It is found that the surface morphology and crystal quality can be greatly improved using three alternation cycles with X-ray diffraction omega-scan full width at half maximum values of 311 and 548 arcsec for the (0002) and (10-12) peaks, respectively, which are induced by the alternation of the three-dimensional (3D) and two-dimensional (2D) growth modes caused by the LT-HT process. The first 3D-2D cycle is found to play a major role in threading dislocation reduction, while the second and third cycles mainly account for tensile stress relaxation.
Fast Growth of High Quality AlN Films on Sapphire Using a Dislocation Filtering Layer for Ultraviolet Light-Emitting Diodes

Yi Zhang,Hanling Long,Jun Zhang,Bo Tan,Qian Chen,Shuang Zhang,Maochen Shan,Zhihua Zheng,Jiangnan Dai,Changqing Chen

DOI: https://doi.org/10.1039/c9ce00589g

IF: 3.756

2019-01-01

CrystEngComm

Abstract:A simple strategy for the mass production of high-quality AlN epilayers on flat sapphire by utilizing a dislocation filtering layer.
High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Lisheng Zhang,Fujun Xu,Mingxing Wang,Yuanhao Sun,Nan Xie,Tao Wang,Boyu Dong,Zhixin Qin,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1016/j.spmi.2017.03.013

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:In this work, a novel strategy for high-quality AlN templates epitaxy on sapphire substrates with sputtered buffer layers combined with a low- and high-temperature alteration technique is proposed. The best full width at half maximum values for (0002) and (11¯02) reflections are 207 and 377 arcsec, respectively. Investigations indicate the joint effect of growth mode control and sputtered buffer layer results in the improvement of AlN crystalline quality. Firstly, threading dislocations density can be significantly decreased due to the alteration from three-dimensional to two-dimensional growth mode. Moreover, the graded composition of AlON layer in the sputtered buffer layer is believed to alleviate lattice mismatch between sapphire substrates and AlN, which also contributes to low dislocations density in AlN templates.
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

Bin Tang,Hongpo Hu,Hui Wan,Jie Zhao,Liyan Gong,Yu Lei,Qiang Zhao,Shengjun Zhou

DOI: https://doi.org/10.1016/j.apsusc.2020.146218

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by introducing voids during growth. Voids are embedded into AlN epilayers through a growth-mode transition from island growth to step flow growth. Such voids significantly facilitated the underlying dislocations annihilation as demonstrated by the transmission electron microscopy (TEM) image. For the 3 mu m-thick AlN film grown on FSS, the full width at half maximum of the X-ray rocking curve was 57/260 arcsec for (0 0 2)/(1 0 2) reflection and a threading dislocation density of 1.7 x 10(8) cm(-2) was determined from plain-view TEM image. Moreover, the voids provided an additional stress relief channel in the AlN film grown on FSS, resulting in a tensile stress comparable to that of grown on nano-patterned sapphire substrate (NPSS). The measured lattice constants and Raman shift of AlN-E-2 (high) peak verified the 3 mu m-thick AlN film grown on FSS is nearly stress free at room temperature. Taking advantages of the deliberately embedded voids, a crack-free and atomically flat AlN film was grown on FSS. The strategy put forward in this work to obtaining high-quality AlN films on FSS is much cost-efficient, which is believed to hold great promise for commercialization in AlN-based devices.
High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Shengyuan Dong,Yanhui Xing,Xuguang Deng,Chunhong Zeng,Chengcheng Zhi,Jiaming Weng,Wenbo Tang,Binghui Wang,Jiahao Li,Tong Liu,Jun Han,Baoshun Zhang,Zhongming Zeng

DOI: https://doi.org/10.1021/acs.cgd.3c00146

IF: 4.01

2023-05-31

Crystal Growth & Design

Abstract:The growth of high-quality AlN films has always been the focus of research. Combined with NH3 in situ pretreatment before growth, with optimized growth conditions, we demonstrated a periodic growth method, which alternates between three-dimensional (3D) growth mode and two-dimensional (2D) growth mode, to grow a thick crack-free AlN film with good crystal quality on the on-axis 4H-SiC substrate by metal–organic chemical vapor deposition (MOCVD). X-ray rocking curves (XRCs) indicated that full width at half-maximum (FWHM) of the (0002) and (10–12) reflections were 241.3″ and 474.4″, respectively. The film thickness was over 1.4 μm. Lattice constant and residual stress results showed residual compressive stress in the sample. The periodic two-step growth and substrate pretreatment both play an important role in controlling the residual stress of films to avoid cracking. This work can serve as an important reference for growing high-quality crack-free AlN on SiC.

chemistry, multidisciplinary,materials science,crystallography
High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

JunShuai Xue,Yue Hao,XiaoWei Zhou,JinCheng Zhang,ChuanKai Yang,XinXiu Ou,LinYu Shi,Hao Wang,LinAn Yang,JinFeng Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2010.11.157

IF: 1.8

2011-01-01

Journal of Crystal Growth

Abstract:High quality InAlN/GaN heterostructures are successfully grown on the (0001) sapphire substrate by pulsed metal organic chemical vapor deposition. The InAlN barrier layer with an indium composition of 17% is observed to be nearly lattice matched to GaN layer, and a smooth surface morphology can be obtained with root mean square roughness of 0.3nm and without indium droplets and phase separation. The 50mm InAlN/GaN heterostructure wafer exhibits a mobility of 1402cm2/Vs with a sheet carrier density of 2.01×1013 cm−2, and a low average sheet resistance of 234Ω/cm2 with a sheet resistance nonuniformity of 1.22%. Compared with the conventional continual growth method, PMOCVD reduces the growth temperature of the InAlN layer and the Al related prereaction in the gas phase, and consequently enhances the surface migration, and improves the crystallization quality. Furthermore, indium concentration of InAlN layer can be controlled by adjusting the pulse time ratio of TMIn to TMAl in a unit cycle, the growth temperature and pressure, as well as the InAlN layer thickness by the number of unit cycle repeats.
High-Quality Single-Crystal Piezoelectric Aluminum Nitride Grown on Gallium Nitride Transition Layer on Sapphire Substrate

Binghui Lin,Yan Liu,Qinwen Xu,Xin Tong,Laixia Nian,Wenjuan Liu,Bo Woon Soon,Yao Cai,Chengliang Sun

DOI: https://doi.org/10.1109/ius54386.2022.9958470

2022-01-01

Abstract:This paper presents a high-quality single-crystal piezoelectric aluminum nitride (AlN) thin film grown on gallium nitride (GaN) transition layer on sapphire substrate. The Metal-organic Chemical Vapor Deposition (MOCVD) process enables the growth of 500 nm-thick AlN on top of GaN through the rapid exchange of gases in the reactor. As the growth thickness of GaN further increases from 0.5 µm to 3.5 µm, the FWHMs of the (002)-plane XRCs of GaN and AlN both obviously decrease. It indicates that the crystal quality of AlN thin film is improved. Especially, the AlN thin film exhibits a FWHM of 0.16°. Besides, the existence of GaN provides a pathway for the subsequent dissociation of AlN films from the sapphire substrate. Using laser lift-off technology, the GaN with AlN thin film can be transferred from the sapphire substrate under the condition of pulsed laser energy density. Besides, a potential process idea for fabricating single-crystal AlN -based thin film bulk acoustic wave resonator (FBAR) is provided.
Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Li Zhang,Zenghua Wang,Hongjuan Cheng,Chenchen Fan,Yingmin Wang,Ying Zhang,Lei Jin,Zhanpin Lai

DOI: https://doi.org/10.1016/j.vacuum.2024.113286

IF: 4

2024-05-18

Vacuum

Abstract:The crystallization of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) by physical vapor transport (PVT), was systematically studied using XRD, UV-Vis, PL, SIMS, Raman and stress simulation. The evolution of crystal quality, transmittance, purity and residual stress of 2-inch AlN crystal in the growth process are described. The crystal quality of AlN growth layer gradually improves with the crystal thickness, as reflected in the decrease of XRD full width at half maximum (FWHM) from higher than 300 arcsec to 85 arcsec, SIMS yielded Si concentrations decreases from 10 20 cm -3 to 10 18 cm -3 , absorbance coefficient @320 nm from 56 cm -1 to 9 cm -1 , and simulated residual stress from 270 MPa to 50 MPa, indicating a comprehensively improved quality by simply increasing the crystal thickness of AlN crystal on SiC seed. Furthermore, a 2-inch crack-free AlN single crystal with high quality was successfully fabricated by inducing a layered structure.

materials science, multidisciplinary,physics, applied
High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD

Hanling Long,Jiangnan Dai,Yi Zhang,Shuai Wang,Bo Tan,Shuang Zhang,Linlin Xu,Maocheng Shan,Zhe Chuan Feng,Hao−Chung Kuo,Chang Chen

DOI: https://doi.org/10.1063/1.5074177

IF: 4

2019-01-01

Applied Physics Letters

Abstract:In this letter, we demonstrate a crack and strain free AlN epilayer with a thickness of 10.6 μm grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of the X-ray rocking curve was 165/185 arcsec for (002)/(102) planes, respectively. The total threading dislocation density was less than 3 × 108 cm−2. The dislocation evolution and the coalescence process were probed by transmission electron microscopy and scanning electron microscopy. A dual coalescence of the AlN epilayer was observed, which can effectively relax strain during the heteroepitaxy process. Owing to the approximately entire strain relaxation demonstrated by reciprocal space mapping and Raman shift, the surface morphology was crack-free and atomically smooth with a root-mean-square roughness of 0.14 nm. Temperature dependent Raman spectra showed the Raman linewidth of 4.3 cm−1 at 300 K which was comparable to that of bulk AlN; it also demonstrated good crystalline quality of the AlN epilayer.
Epitaxial Growth of High Quality AlN Films on Si Substrates

Meijuan Yang,Wenliang Wang,Yunhao Lin,Weijia Yang,Guoqiang Li

DOI: https://doi.org/10.1016/j.matlet.2016.07.003

IF: 3

2016-01-01

Materials Letters

Abstract:Quality-enhanced AlN epitaxial films on Si substrates with Al buffer layer have been grown by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is deployed to grow Al buffer layer at first, and PLD is used to grow AlN epitaxial films on the Al buffer layer. It is found that as the increase in the growth temperature, the property of as-grown ~300nm-thick AlN epitaxial films is first increased and then decreased, and shows an optimized value at 750°C. The as-grown ~300nm-thick AlN epitaxial films grown at 750°C show full-width at half-maximums of AlN (0002) and AlN () of 0.45° and 0.80°, respectively, a root-mean-square surface roughness of 1.4nm. This work provides an effective approach for the growth of high-quality AlN epitaxial films on Si substrates for the future application of AlN-based devices.
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Yue Qi,Yunyu Wang,Zhenqian Pang,Zhipeng Dou,Tongbo Wei,Peng Gao,Shishu Zhang,Xiaozhi Xu,Zhenghua Chang,Bing Deng,Shulin Chen,Zhaolong Chen,Haina Ci,Ruoyu Wang,Fuzhen Zhao,Jianchang Yan,Xiaoyan Yi,Kaihui Liu,Hailin Peng,Zhiqiang Liu,Lianming Tong,Jin Zhang,Yujie Wei,Jinmin Li,Zhongfan Liu

DOI: https://doi.org/10.1021/jacs.8b03871

IF: 15

2018-09-03

Journal of the American Chemical Society

Abstract:We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.

chemistry, multidisciplinary
Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

Degang Zhao,,Desheng Jiang,Liangliang Wu,Lingcong Le,Lü Li,Peng Chen,Zhi Liu,Jiaji Zhu,Hui Wang,S. M. Zhang,Hui Yang

DOI: https://doi.org/10.1016/j.jallcom.2012.07.123

IF: 6.2

2012-01-01

Journal of Alloys and Compounds

Abstract:A dual AlN buffer layer structure, including an isolated layer and a nucleation layer, is proposed to improve the growth of AlN films on sapphire substrate by metal organic chemical vapor deposition. This method is aimed to weaken the negative nitridation effect and improve lateral growth condition in the initial growth stage. It is found that suitably increasing the thickness of the nucleation layer is in favor of a better structural quality of the AlN film. An examination of surface morphology by atomic force microscopy suggests that the thicker the dual AlN buffer layer, the rougher the surface, and a higher quality of AlN epilayer is resulted. © 2012 Elsevier B.V. All rights reserved.
MOCVD Growth of Device—quality GaN on Sapphire

LIUBao-lin

2002-01-01

Abstract:An AlN Layer grown by an ALE has been developed to improve the growth quality of GaN on Al2O3 substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). An ALE AlN layer grown on Al2O3 substrate has a high quality and the structure is similar to GaN, this AlN layer can release the stress between Al2O3 substrate and GaN epilayer. By using this method, the orientation of substrate is extended to GaN epilayer, and the column tilt and the twist are improved, so as to obtain the device-quality GaN.
Growth of High Al Content AlGaN Epilayer by MOCVD

Xiaoyan Wang,Xiaoliang Wang,Guoxin Hu,Baozhu Wang,Jianping Li,Hongling Xiao,Junxi Wang,Hongxin Liu,Yiping Zeng,Jinmin Li

DOI: https://doi.org/10.3321/j.issn:0253-4177.2007.z1.047

2007-01-01

Abstract:High Al content AlGaN films are grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) using AlN/AlGaN superlattices. Transmission measurements combined with double-crystal X-ray diffraction (DCXRD) and scanning electron microscopy (SEM) are used to characterize the AlGaN epilayers. The optical properties, crystal quality and surface morphology of AlGaN epilayers deposited at 1.33 × 104 and 0.66 × 104 Pa are also compared.
Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Qing Zeng,Zhaolong Chen,Yun Zhao,Tongbo Wei,Xiang Chen,Yun Zhang,Guodong Yuan,Jinmin Li

DOI: https://doi.org/10.7567/JJAP.55.085501

IF: 1.5

2016-01-01

Japanese Journal of Applied Physics

Abstract:High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10 (1) over bar2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 degrees C growth of AlN. (C) 2016 The Japan Society of Applied Physics
Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Nan Xie,Fujun Xu,Na Zhang,Jing Lang,Jiaming Wang,Mingxing Wang,Yuanhao Sun,Baiyin Liu,Weikun Ge,Zhixin Qin,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.7567/1347-4065/ab456d

IF: 1.5

2019-01-01

Japanese Journal of Applied Physics

Abstract:A comprehensive strategy of crystal quality control for AlN grown on a nano-patterned sapphire substrate has been explored based on the period size effect. It is found that the crystalline perfection of AlN can be greatly improved by enlarging the period size from 1.0 to 1.4 μm, and the X-ray diffraction ω-scan FWHM values for (0002) and (10-12) planes reach 162 and 181 arcsec, respectively, owning to the significantly reduced area ratio of the coalescence zone. Our results indicate the pattern design requires a critical balance between reducing the area ratio of the coalescence zone and decreasing the coalescence thickness.
Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Xiangyu Lin,Hui Zhang,Chaoyuan Li,Xinjian Xie,Lifeng Bian,Guifeng Chen

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127451

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:Control of the growth process is important for growing high-quality AlN films. In this work, AlN films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy (MNVPE). Interlayer was added between the buffer layer and the formal layer, and the effect of the V/III ratio of the interlayer on the crystal quality, surface morphology and stress evolution of the films were analyzed. An interlayer with proper V/III ratio can provide a stable transition from 3D growth mode to 2D growth mode, while high V/III ratio induce film separation. The optimum V/III ratio for the interlayer was found to be 11050, and the films obtained under this parameter had a FWHM of the (002) and (102) reflections were 641 arcsec and 840 arcsec, respectively. The maximum transmission is 88%. And the film separation phenomenon was found on the samples with high V/III ratio in the second step, which was thought to be the result of growing in 3D mode for a long time.

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Fast Growth of High Quality AlN Films on Sapphire Using a Dislocation Filtering Layer for Ultraviolet Light-Emitting Diodes

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

High-Quality Single-Crystal Piezoelectric Aluminum Nitride Grown on Gallium Nitride Transition Layer on Sapphire Substrate

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD

Epitaxial Growth of High Quality AlN Films on Si Substrates

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

MOCVD Growth of Device—quality GaN on Sapphire

Growth of High Al Content AlGaN Epilayer by MOCVD

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy