Abstract:AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Improvements in A-Plane Gan Crystal Quality by Aln/Algan Superlattices Layers

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy