Abstract:In order to analyze the influence of different substrates on the performance of metal-insulator-semiconductor AlGaN/GaN high-electron mobility transistors, devices on free-standing GaN (FS-GaN), silicon, and sapphire substrates with similar AlGaN/GaN top layers were fabricated. Comparedwith Si and sapphire substrates, the devices on the FS-GaN substrate not only achieve remarkable improvement in the direct current characteristics but also have much better thermal stability and can significantly suppress the self-heating effects, where the current density only decreases by 4% with the channel at 48 degrees C and an ambient of 25 degrees C. Owing to the lower trap and dislocation densities in the epitaxial layers, the dynamic performance and reliability of the devices on the FS-GaN substrate are also dramatically improved. With an off-state drain bias of 50 V kept for 10 s, the devices on the FS-GaN substrate only suffer a 10% increase in dynamic on resistance, much lower than the devices on the Si and sapphire substrates. In addition, all the devices were exposed to a 3-MeV proton irradiation with a dose of 3 x 10(14) cm(-2). Compared with the devices before radiation treatment, the dynamic on resistance increases by 79% with a 20-V off-state stress for the devices on the FS-GaN substrate, while the increase is over 800% for the other devices. The lower performance degradation for the devices on the FS-GaN substrate indicates a lower displacement damage and better irradiation tolerance.

The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Preparation of Algan/Gan Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

AlN/nitrided Sapphire and AlN/non-nitrided Sapphire Hetero-Structures Epitaxially Grown by Pulsed Laser Deposition: A Comparative Study

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

High Performance AlGaN/GaN Hemts on GaN Substrates

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Reliability Improvement of GaN Devices on Free-Standing GaN Substrates

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition