Abstract:The microstructure, optical absorption ties and luminescence function of GaN thin films grown on the sapphire substrate with the buffer layer of GaN by metal-organic chemical vapor deposition (MOCVD) have been studied by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared transmission spectrum, ultraviolet-visible absorption spectrum and photoluminescence. XRD results show that the crystal structure of GaN is hexagonal wurtzite structure. The thin films have preferred orientation in c axis with very high quality. TEM images of the cross-sectional specimen show that the thickness of every layer in the superlattice are uniform with the average period of 13.3 nm, but there are high-density dislocations in the superlattices region. From related optical experimental data, it is found that optical absorption edge is at about 370 nm. The theory calculation indicates that the five samples are direct transition semiconductor and band-gaps are about 3.4 eV. The refractive indexes of the samples increase with photon energy enhancing and decrease with the wavelength increasing. The results show that the extinction coefficients reach the lowest point at 370 nm. Photoluminescence test results show that superlattice has preferable luminescence property. In addition, the yellow luminescence is found in all samples. © 2005 Trans Tech Publications, Switzerland.

Preparation of Algan/Gan Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

The Optical Properties of Algan/Gan P-I-N Structure

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN

The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate

Growth of Wurtzite GaN Films on Α-Al2o3 Substrates Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

The Morphology and Optical Characterizations of Algan/Gan Based on Al2o3 Prepared by Mocvd

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Characterizations of GaN Films and AlGaN/GaN Heterostructures on Vicinal Sapphire (0001) Substrates Grown by MOCVD

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition