Abstract:High channel current of the high electron mobility transistors (HEMTs) and high relative responsivity of the photodetectors (PDs) were demonstrated in the AlGaN/AlN/GaN channel-stacking epitaxial structures. The interference properties of the X-ray curves indicated high-quality interfaces of the conductive channels. The AlGaN/AlN/GaN interfaces were observed clearly in the transmission electron microscope micrograph. The saturation I ds currents of the HEMT structures were increased by adding a number of channels. The conductive properties of the channel-stacking structures corresponded to the peaks of the transconductance (g m) spectra in the HEMT structures. The depletion-mode one- and two-channel HEMT structures can be operated at the cutoff region by increasing the reverse V gs bias voltages. Higher I ds current in the active state and lower current in the cutoff state were observed in the two-channel HEMT structure compared with one- and three-channel HEMT structures. For the channel-stacking metal-semiconductor-metal photodetector structures, the peak responsivity was observed at almost 300 nm incident monochromic light, which was increased by adding a number of channel layers. The channel current of the HEMT devices and the photocurrent in the PD devices were increased by adding a number of two-dimensional electron gas (2DEG) channels. By using a flat gate metal layer, the two-channel AlGaN/AlN/GaN HEMT structures exhibited a high I ds current, a low cutoff current, and a high peak g m value and have the potential for GaN-based power devices, fast portable chargers, and ultraviolet PD applications.

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Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Effects of AlGaN Layer Parameter on Ultraviolet Response of N+-Gan/i-alxga1-xn/n+-gan Structure Ultraviolet-Infrared Photodetector

Preparation of Algan/Gan Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

The Morphology and Optical Characterizations of Algan/Gan Based on Al2o3 Prepared by Mocvd

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

AlGaN‐based 330 Nm Resonant‐cavity‐enhanced P–i–n Junction Ultraviolet Photodetectors Using AlN/AlGaN Distributed Bragg Reflectors

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

An AlGaN-Based Resonant-Cavity-Enhanced P-I-n Ultraviolet Photodetector

Excellent Wavelength Selectivity of P-Algan/n-ga2o3 Solar-Blind UVC PD.

Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure

Analysis of Structure and Characteristics of AlGaN PIN Ultraviolet Photodetectors

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced P-I-n UV PDs

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

Al x Ga 1- x N solar-blind photodetectors grown by low pressure MOCVD

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition