Abstract:High channel current of the high electron mobility transistors (HEMTs) and high relative responsivity of the photodetectors (PDs) were demonstrated in the AlGaN/AlN/GaN channel-stacking epitaxial structures. The interference properties of the X-ray curves indicated high-quality interfaces of the conductive channels. The AlGaN/AlN/GaN interfaces were observed clearly in the transmission electron microscope micrograph. The saturation I ds currents of the HEMT structures were increased by adding a number of channels. The conductive properties of the channel-stacking structures corresponded to the peaks of the transconductance (g m) spectra in the HEMT structures. The depletion-mode one- and two-channel HEMT structures can be operated at the cutoff region by increasing the reverse V gs bias voltages. Higher I ds current in the active state and lower current in the cutoff state were observed in the two-channel HEMT structure compared with one- and three-channel HEMT structures. For the channel-stacking metal-semiconductor-metal photodetector structures, the peak responsivity was observed at almost 300 nm incident monochromic light, which was increased by adding a number of channel layers. The channel current of the HEMT devices and the photocurrent in the PD devices were increased by adding a number of two-dimensional electron gas (2DEG) channels. By using a flat gate metal layer, the two-channel AlGaN/AlN/GaN HEMT structures exhibited a high I ds current, a low cutoff current, and a high peak g m value and have the potential for GaN-based power devices, fast portable chargers, and ultraviolet PD applications.

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Effects of the polarization fields on the responsivity of the AlN/GaN photodetectors

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

Photocurrent Characteristics of Two-Dimensional-Electron-Gas-Based Algan/Gan Metal-Semiconductor-Metal Photodetectors

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Photocurrent Properties of the AlGaN/GaN/AlGaN Multilayer Structure on Si

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Interface engineering by inserting Al 2 O 3 tunneling layer to enhance the performance of graphene/GaAs heterojunction photodetector

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

The Optical Properties of Algan/Gan P-I-N Structure

High performance self-powered photodetectors based on graphene nanoribbons/Al 2 O 3 /InGaZnO heterojunctions

Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector