Abstract:Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly.

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Temperature-dependent Polarization Characteristics in Al0.25Ga0.75N/AlN/GaN Heterostructure

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

Two-dimensional electron gas characteristics of ferroelectric/GaN heterostructure