Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Polarization Effects Simulation of AlGaN/GaN Heterojunction by Using a Symbolistic Δ-Doping Layer

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Ferroelectric domain modulated AlGaN/GaN field effect transistor

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Impact of Dopants in GaN on the Formation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field-Effect Transistors