Abstract:Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the formation mechanism of the two - dimensional electron gas (2DEG) induced by spontaneous polarization and piezoelectric polarization charges in N - face and Ga - face AlGaN/GaN heterostructures and its influence on the carrier concentration distribution. Specifically, the research focuses on the following aspects: 1. **Carrier concentration distribution**: The carrier concentration distribution of the two - dimensional electron gas in AlGaN barrier layers with different Al contents (0.15 ≤ x ≤ 0.5) and different thicknesses (20 - 65 nm) was studied. Through experimental measurements, it was found that high Al content and thick barrier layers lead to higher carrier concentrations. 2. **The role of spontaneous polarization and piezoelectric polarization**: The important role of spontaneous polarization and piezoelectric polarization in carrier confinement at the AlGaN/GaN and GaN/AlGaN interfaces was analyzed. Research shows that these polarization effects can significantly affect the charge density and electric field distribution at the interface, resulting in a high - concentration two - dimensional electron gas. 3. **The influence of polarity on the position of 2DEG**: The position differences of 2DEG in N - face and Ga - face heterostructures were explored. The experimental results show that in the N - face heterostructure, 2DEG is mainly located at the upper GaN/AlGaN interface; while in the Ga - face heterostructure, 2DEG is located at the upper AlGaN/GaN interface. 4. **Optimization of electrical properties**: By optimizing the growth conditions (such as substrate temperature, Ga flux, etc.), the electrical properties of GaN and AlGaN films were improved, especially the electron mobility was increased and the free carrier concentration was reduced. Through detailed experimental data and theoretical analysis, the paper reveals the crucial role of spontaneous polarization and piezoelectric polarization in the formation of 2DEG in AlGaN/GaN heterostructures and provides an important reference for the design of high - performance field - effect transistors (HFETs).

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