Abstract:Frequency dispersion of the capacitance (C–f) of GaN-based heterostructure are commonly observed at high frequencies. Analytical solutions are derived for frequency dispersion of the heterostructure’s capacitance measured on two concentric-circle Schottky contacts, in form of Bessel function, by modeling a distributed network of heterostructure and solving corresponding circular transmission line functions. Solutions reveal C–f is determined by the Rs of 2-D electron gas (2-DEG). So in reverse, the sheet resistance at a certain carrier density can be extracted from the C–f measurement. By fitting experimental C–f data with the model, we obtain a peak mobility of 2044 cm2/ $\text {V}\cdot \text {s}$ corresponding to a 2-DEG density of $8.2 \times 10^{12}$ cm−2 and a sheet resistance of $373~\Omega / \square$ on an Al0.25Ga0.75N/GaN heterostructure on silicon substrate. The advantage of two Schottky contacts is that they could be implemented by mercury probes with the same geometry, then achieving nondestructive and instant feedback on carrier transport properties and uniformity of as-grown III–V compound semiconductor wafers

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations