Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al 0.25 Ga 0.75 N/GaN Quantum Point Contacts

Carrier transport in LPCVD grown Ge-doped β -Ga2O3/4H-SiC isotype heterojunction

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors