Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Carrier transport in LPCVD grown Ge-doped β -Ga2O3/4H-SiC isotype heterojunction

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

The Modulation Effect of LPCVD-Si X N Y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities

Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy

Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers

Over 6 μ m thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β -Ga2O3 drift layers

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga 2 O 3 Films on $(\overline{2}01)\ \beta$ -Ga 2 O 3 by Laser Molecular Beam Epitaxy

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p – n heterojunction

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Band Alignment and Electronic Structure of Β-Ga2o3 (−201) Grown on Si- and C-faces of 4h–sic Substrates