Abstract:This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10$^{15}$ cm$^{-3}$) MOCVD-grown thick $\beta$-Ga$_2$O$_3$ epitaxial drift layers, with thicknesses reaching up to 6.3 $\mu$m, using triethylgallium (TEGa) as a precursor. Record high room temperature Hall mobilities of 187-190 cm$^2$/Vs were measured for background carrier density values of 2.4 - 3.5$\times$10$^{15}$ cm$^{-3}$ grown at a rate of 2.2 $\mu$m/hr. A controlled background carrier density scaling from 3.3$\times$10$^{16}$ cm$^{-3}$ to 2.4$\times$10$^{15}$ cm$^{-3}$ is demonstrated, without the use of intentional dopant gases such as silane, by controlling the growth rate and O$_2$/TEGa ratio. Films show smooth surface morphologies of 0.8-3.8 nm RMS roughness for film thicknesses of 1.24 - 6.3$\mu$m. Vertical Ni Schottky barrier diodes (SBDs) fabricated on UID MOCVD material were compared with those fabricated on hydride vapor phase epitaxy (HVPE) material, revealing superior material and device characteristics. MOCVD SBDs on a 6.3 $\mu$m thick epitaxial layer show a uniform charge vs. depth profile of $\sim$2.4$\times$10$^{15}$ cm$^{-3}$, an estimated $\mu$$_{drift}$ of 132 cm$^2$/Vs, a breakdown voltage (V$_{BR}$) close to 1.2 kV and a surface parallel plane field of 2.05MV/cm without any electric field management - setting record-high parameters for any MOCVD-grown $\beta$-Ga$_2$O$_3$ vertical diode to date.

What problem does this paper attempt to address?

The paper mainly aims to address the following issues: ### Core Research Questions 1. **Develop high-quality β-Ga₂O₃ drift layer materials with low background carrier density**: Prepare β-Ga₂O₃ drift layer materials with high mobility and low background carrier density (on the order of 10¹⁵ cm⁻³) using metal-organic chemical vapor deposition (MOCVD) technology for high-performance vertical power devices. 2. **Achieve thick layer growth and rapid growth**: Explore the maximum growth thickness and highest growth rate of β-Ga₂O₃ materials while maintaining material performance to improve economic efficiency and practicality. 3. **Optimize growth conditions**: Effectively control the background carrier density of the material and achieve the desired surface roughness by adjusting growth parameters (such as temperature, pressure, precursor flow, etc.). 4. **Evaluate material performance**: Assess the electronic properties of the material, including carrier concentration and mobility, through Hall effect measurements, capacitance-voltage (CV) measurements, and other methods. 5. **Device performance verification**: Fabricate vertical Schottky barrier diodes (SBD) using the prepared materials and verify the superiority of the materials by comparing them with devices made from commercial hydride vapor phase epitaxy (HVPE) materials. ### Specific Goals - Achieve a 6.3-micron-thick β-Ga₂O₃ drift layer while maintaining room temperature Hall mobility as high as 187-190 cm²/Vs. - Control the background carrier density from 3.3×10¹⁶ cm⁻³ down to 2.4×10¹⁵ cm⁻³ without the use of intentional doping gases. - Optimize the growth rate to 2.2 microns per hour while maintaining good surface morphology. - The fabricated vertical Ni Schottky barrier diodes exhibit device characteristics superior to those of HVPE materials, including higher breakdown voltage (VBR) and surface parallel plane electric field strength. - Verify that the material is suitable for high-voltage power switching applications, especially demonstrating excellent performance at breakdown voltages exceeding 1.2 kilovolts. Through this research, the work aims to promote the application and development of β-Ga₂O₃ materials in high-voltage power electronic devices.

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