Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Over 6 μ m thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β -Ga2O3 drift layers

Over 6 $μ$m thick MOCVD-grown Low-Background Carrier Density (10$^{15}$ cm$^{-3}$) High-Mobility (010) $β$-Ga$_2$O$_3$ Drift Layers

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

High conductivity of n -type β -Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga 2 O 3 Films on $(\overline{2}01)\ \beta$ -Ga 2 O 3 by Laser Molecular Beam Epitaxy

Unintentional Doping Effect in Si-doped MOCVD Β-Ga2o3 Films: Shallow Donor States

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga<sub>2</sub>O<sub>3</sub> Films on $(\overline{2}01)\ \beta$-Ga<sub>2</sub>O<sub>3</sub> by Laser Molecular Beam Epitaxy

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition