High conductivity of n -type β -Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

Shoma Hosaka,Hiroyuki Nishinaka,Temma Ogawa,Hiroki Miyake,Masahiro Yoshimoto

DOI: https://doi.org/10.1063/5.0182448

IF: 1.697

2024-01-01

AIP Advances

Abstract:Currently, β-Ga2O3 has attracted significant attention as a wide bandgap semiconductor, and numerous growth techniques are being explored to control its carrier concentration for various applications. In this study, we investigated the homoepitaxial growth of Si-doped β-Ga2O3 thin films on a Fe-doped β-Ga2O3 substrate using the mist chemical vapor deposition (CVD) technique developed in our group to obtain highly conductive thin films. Using mist CVD, we obtained highly crystalline Si-doped β-Ga2O3 thin films with a full-width at half-maximum of ∼40 arc sec for the (020) peak in the x-ray diffraction rocking curve. Atomic force microscopy studies indicated considerably smooth surfaces of the films with a small root mean square roughness (less than 0.5 nm). Furthermore, we controlled the carrier concentration in the range of 3.85 × 1018 to 2.58 × 1020 cm−3 by varying the Si concentration in the precursor solution. The film exhibits the highest conductivity of 2368 S/cm (mobility = 57.2 cm2/V s at the carrier concentration of 2.58 × 1020 cm−3). This study is expected to promote the application of β-Ga2O3 in devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem this paper attempts to address is the preparation of highly conductive n-type β-Ga₂O₃(010) thin films through Si doping and mist chemical vapor deposition (mist CVD) technology. Specifically, the research objectives include: 1. **Achieving high conductivity**: By Si doping, increase the carrier concentration and mobility of β-Ga₂O₃ thin films to obtain high conductivity. 2. **Controlling carrier concentration**: Precisely control the carrier concentration of the thin films in the range of 10¹⁸ to 10²⁰ cm⁻³ by adjusting the Si concentration in the precursor solution. 3. **Improving crystal quality**: Ensure that the prepared thin films have high crystallinity and low surface roughness. 4. **Exploring growth mechanisms**: Study the effects of Si doping on the crystal structure and electrical properties of β-Ga₂O₃ thin films to provide a theoretical basis for further optimization of growth conditions. Through these objectives, the research aims to promote the practical application of β-Ga₂O₃ in power devices and fast switching devices.

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