Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

High conductivity of n -type β -Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Heteroepitaxial Growth of Thickα-Ga2o3film on Sapphire (0001) by MIST-CVD Technique

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition