Abstract:Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much wider than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five known phases (α, β, γ, d, ε/κ). The breakdown field of β-Ga2O3 is predicted to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. Single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Metalorganic chemical vapor deposition (MOCVD) growth technique was demonstrated to produce high quality β-Ga2O3 thin films and its ternary (AlxGa1-x)2O3 alloys. Control of background and n-type doping in β-Ga2O3 will be discussed. Record carrier mobilities of 194 cm2/V·s at room temperature and ~10,000 cm2/V·s at low temperature were measured for MOCVD β-Ga2O3 thin films. Growth and fundamental understanding of β-(AlxGa1-x)2O3 are still limited. The incorporation of Al in beta-phase Ga2O3 has not been well understood, although it was predicted up to 60% of Al composition could be incorporated into β-Ga2O3. MOCVD growth of β-AlGaO targeting for Al composition of > 40% will be discussed. N-type doping capability as a function of Al composition in (AlxGa1-x)2O3 is another important fundamental question. Charge carrier transport properties in (AlxGa1-x)2O3 will be discussed. In addition, MOCVD growth of different phases of Ga2O3 and AlGaO will be presented. Acknowledgement: The authors acknowledge the funding support from the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 2019753, 1755479).

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Demonstration of MOCVD based in situ etching of β -Ga2O3 using TEGa

ε-Ga 2 O 3 Grown on c -Plane Sapphire by MOCVD with a Multistep Growth Process

Growth of GeO2 on R-plane and C-plane Sapphires by MOCVD

Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition