Abstract:Gallium oxide(Ga_2O_3),a wide direct-gap semiconductor(E_g≈4.9 eV),has recently attracted interests as a new material for a gas sensor,transparent conductor,luminescent phosphors,solar cells,electronic and optoeclectonic applications.For Ga_2O_3 films growth,numerous deposition techniques including sputtering,electron-beam evaporation,molecular beam epitaxy(MBE),pulse-laser deposition(PLD),and metal organic chemical vapor deposition(MOCVD) have been employed.Among these techniques,MOCVD has many advantages for volume production and it has been proved to be excellent growth technique for Ⅲ-Ⅴs especially for the nitrides.Ga_2O_3 films used in this study were grown by a home-built vertical atmospheric pressure MOCVD system.Deionized water and trimethylgallium(TMGa) were used as the O and Ga sources,respectively,using nitrogen as the carrier gas.Typical growth conditions were as follows: chamber pressure was 103.3 kPa.The thickness of buffer layer is about 15 nm,growth temperature was 500 ℃,epilayer growth temperature was 700 ℃,and a total carrier gas flow rate was about 15 000 sccm.The thickness of the Ga_2O_3 layer was about 2 μm.Ga_2O_3 epilayer characteristics were investigated by AFM,X-ray diffraction(XRD) and secondary ion mass spectroscopy(SIMS).The results of AFM indicated the Ga_2O_3 films grew up with columniation shape and the structure was relatively compact.The root mean square(RMS) roughness as determined by AFM(30 μm×30 μm) of the film surface was about 40 nm.The Ga_2O_3 grain size was about 30～40 nm determined by AFM.X-ray diffraction spectrum showed that the FWHM of(1-02) diffraction peak was 0.25°,which indicated the good quality of βGa_2O_3 film.The Ga_2O_3 grain size was calculated about 32 nm by Scherrer's formula,which was consistent with the result of AFM.The results of SIMS showed that the Ga_2O_3 epitaxial films had good purity.

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Β- Ga 2 O 3 Epitaxial Films Deposited on Epi-Gan/sapphire (0001) Substrates by MOCVD

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Characterization of Β-Ga2o3 Thin Films on Sapphire (0001) Using Metal-Organic Chemical Vapor Deposition Technique

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Ga2O3 Thin Films Grown on Sapphire by Atmospheric Pressure MOCVD

The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1-x)2O3 Intermediate Buffer Layer

Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition

Heteroepitaxial Growth of Thickα-Ga2o3film on Sapphire (0001) by MIST-CVD Technique

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

Structural and Optical Properties of Β-Ga2o3 Thin Films on Sapphire

ε-Ga 2 O 3 Grown on c -Plane Sapphire by MOCVD with a Multistep Growth Process

Heterogrowth of -(Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub > Thin Films on Sapphire Substrates

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering