Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

Jacob Steele,Kathy Azizie,Naomi Pieczulewski,Yunjo Kim,Shin Mou,Thaddeus J. Asel,Adam T. Neal,Debdeep Jena,Huili G. Xing,David A. Muller,Takeyoshi Onuma,Darrell G. Schlom

DOI: https://doi.org/10.1063/5.0170095

IF: 6.6351

2024-04-01

APL Materials

Abstract:We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow α-(AlxGa1−x)2O3 films on (110) sapphire substrates over the 0 < x < 0.95 range of aluminum content. In S-MBE, 99.98% of the gallium-containing molecular beam arrives at the substrate in a preoxidized form as gallium suboxide (Ga2O). This bypasses the rate-limiting step of conventional MBE for the growth of gallium oxide (Ga2O3) from a gallium molecular beam and allows us to grow fully epitaxial α-(AlxGa1−x)2O3 films at growth rates exceeding 1 μm/h and relatively low substrate temperature (Tsub = 605 ± 15 °C). The ability to grow α-(AlxGa1−x)2O3 over the nominally full composition range is confirmed by Vegard’s law applied to the x-ray diffraction data and by optical bandgap measurements with ultraviolet–visible spectroscopy. We show that S-MBE allows straightforward composition control and bandgap selection for α-(AlxGa1−x)2O3 films as the aluminum incorporation x in the film is linear with the relative flux ratio of aluminum to Ga2O. The films are characterized by atomic-force microscopy, x-ray diffraction, and scanning transmission electron microscopy (STEM). These α-(AlxGa1−x)2O3 films grown by S-MBE at record growth rates exhibit a rocking curve full width at half maximum of ≊ 12 arc secs, rms roughness <1 nm, and are fully commensurate for x ≥ 0.5 for 20–50 nm thick films. STEM imaging of the x = 0.78 sample reveals high structural quality and uniform composition. Despite the high structural quality of the films, our attempts at doping with silicon result in highly insulating films.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to increase the growth rate of α-(AlxGa1−x)2O3 films while maintaining high - quality thin - film growth. Specifically, the researchers grew α-(AlxGa1−x)2O3 films on sapphire substrates using sub - oxide molecular beam epitaxy (S - MBE), aiming to achieve a growth rate exceeding 1 μm/h and to grow high - quality films with an aluminum content ranging from 0 to 0.95. Due to limitations in growth kinetics, the traditional molecular beam epitaxy (MBE) technique can usually only reach a growth rate of about 0.1 μm/h, which limits its efficiency in practical applications. By using the S - MBE technique, the researchers hope to overcome these limitations and achieve a faster growth rate while maintaining the high quality of the films.

### Main problems and solutions

1. **Increasing the growth rate**:
- **Limitations of traditional MBE**: In the traditional MBE technique, the gallium source needs to react with oxygen to form a sub - oxide (such as Ga2O) first, and then be further oxidized to Ga2O3. The sub - oxide Ga2O in this process has high volatility, resulting in a short surface residence time and limiting the growth rate.
- **Advantages of S - MBE**: The S - MBE technique directly uses pre - oxidized gallium sub - oxide (Ga2O) as the source material, skipping the step of forming the sub - oxide, thereby simplifying the growth kinetics and increasing the growth rate.

2. **Controlling the film composition**:
- **Ratio of aluminum and gallium**: By adjusting the flux ratio of aluminum and gallium sub - oxides, the aluminum content x in the film can be precisely controlled. It has been found that the aluminum flux has a linear relationship with the aluminum content in the film, which makes composition control simple and effective.
- **Effect of temperature**: As the aluminum flux increases, the substrate temperature also needs to be increased accordingly to ensure the effective incorporation of aluminum atoms. In the study, the substrate temperature varies within the range of 605 ± 15°C to meet the growth requirements of different aluminum contents.

3. **Maintaining the film quality**:
- **Structural quality**: Through characterization methods such as X - ray diffraction (XRD) and scanning transmission electron microscopy (STEM), the researchers have confirmed the high quality of the films. For example, the existence of Laue oscillations indicates that the film has good crystalline quality, the full width at half - maximum (FWHM) of the rocking curve is as low as 12 arc seconds, and the surface roughness is less than 1 nm.
- **Strain state**: Through asymmetric reciprocal space mapping (RSM), the researchers have found that the film is nearly fully relaxed when the aluminum content is low, and is fully strained when the aluminum content is high. This change in the strain state has an important impact on the performance of the film.

### Conclusion

By using the S - MBE technique, the researchers have successfully grown α-(AlxGa1−x)2O3 films with an aluminum content ranging from 0 to 0.95 on sapphire substrates at a growth rate exceeding 1 μm/h. These films not only have a high growth rate but also maintain excellent structural quality and optical properties. This study provides a new and efficient method for preparing high - performance α-(AlxGa1−x)2O3 films and is expected to play an important role in future semiconductor devices and optoelectronic applications.