Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Jingyu Tang,Kunyao Jiang,Chengchao Xu,Matthew J. Cabral,Kelly Xiao,Lisa M. Porter,Robert F. Davis

DOI: https://doi.org/10.1063/5.0180922

IF: 6.6351

2024-01-01

APL Materials

Abstract:Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the “γ-phase” and (ii) the site preference(s) for these dopants promotes the formation of “γ-phase” and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the following aspects:

1. **Growth conditions of γ - Ga₂O₃ thin films**: Researchers aim to explore the optimal temperature window for growing pure - phase γ - Ga₂O₃ thin films on (100) MgAl₂O₄ substrates by means of metal - organic chemical vapor deposition (MOCVD). It is found that when the deposition temperature is around 470 °C, a nominally pure - phase γ - Ga₂O₃ thin film can be obtained. At 440 °C, the thin film shows poor crystallinity or an amorphous structure; at 500 °C, the thin film contains both β - Ga₂O₃ and γ - Ga₂O₃; at 530 °C, a nominally pure - phase β - Ga₂O₃ thin film is obtained.

2. **Defect analysis in γ - Ga₂O₃ thin films**: Through atomic - resolution scanning transmission electron microscopy (STEM), a detailed study of the γ - Ga₂O₃ thin film grown at 470 °C reveals the existence of a large number of antiphase boundaries in the thin film. The existence of these defects is of great significance for understanding the crystal structure and properties of γ - Ga₂O₃.

3. **Epitaxial relationship between γ - Ga₂O₃ and β - Ga₂O₃**: The research explores the epitaxial relationship between γ - Ga₂O₃ and β - Ga₂O₃ in the γ - Ga₂O₃ thin film grown at 470 °C and the film after annealing at 600 °C. In particular, it focuses on the 180° and 90° rotation domains of β - Ga₂O₃ inclusions in the γ - Ga₂O₃ matrix, which is crucial for understanding the interaction between the two phases and its impact on material properties.

4. **Effect of dopants on the stability of γ - Ga₂O₃**: The research hypothesizes that the introduction of certain dopants (such as Si, Ge, Sn, Mg, Al, and Sc) can locally stabilize the "γ - phase", and the preference of these dopants for occupation sites promotes the formation of the "γ - phase" or γ - Ga₂O₃ solid solution. However, in the absence of these dopants, pure γ - Ga₂O₃ is still the most unstable Ga₂O₃ polymorph, with a very narrow growth window, a growth temperature lower than other Ga₂O₃ polymorphs, and the largest Helmholtz free - energy difference per unit formula compared to β - Ga₂O₃.

In summary, through systematic experimental and theoretical analysis, this paper deeply explores the growth conditions, defect characteristics, epitaxial relationship with β - Ga₂O₃, and factors affecting its stability of γ - Ga₂O₃ thin films, providing an important scientific basis for understanding and optimizing the preparation and application of this material.