Abstract:The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere.

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

The oxidation of GaN epilayers in dry oxygen

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

The Oxidation of Gallium Nitride Epilayers in Dry Oxygen

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

Structural, Morphological, Ftir and Photoluminescence Properties of Gallium Oxide Thin Films

High-Pressure and High-Temperature Behaviour of Gallium Oxide

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Study on the Nitridation of Β-Ga2o3 Films*

Effects of Oxidation Temperature on Ga2O3film Thermally Grown on GaN

Investigation of Β-Ga 2 O 3 Films and Β-Ga 2 O 3 /gan Heterostructures Grown by Metal Organic Chemical Vapor Deposition

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Effect of Temperature on the Structural and Optical Properties of Ga2O3Thin Films Grown on M-Plane Sapphire Substrates by Low-Pressure MOCVD

The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals