Abstract:The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere.

The oxidation of GaN epilayers in dry oxygen

The Oxidation of Gallium Nitride Epilayers in Dry Oxygen

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Oxidation of GaN: An ab initio thermodynamic approach

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

Effects of Oxidation Temperature on Ga2O3film Thermally Grown on GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Electrical and Optical Properties of G-Gan/al0.5ga0.5n 2D/3D Heterojunction under Surface Oxidation Via First-Principles

Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3

High reactivity of H2O vapor on GaN surfaces

Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation

Strong Influence of Sio2 Thin Film on Properties of Gan Epilayers

Oxidation-based Wet-Etching Method for Al Ga N/Ga N Structure with Different Oxidation Times and Temperatures

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Study on the Nitridation of Β-Ga2o3 Films*

Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN