Abstract:The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere.

Effects of Oxidation Temperature on Ga2O3film Thermally Grown on GaN

Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

The Oxidation of Gallium Nitride Epilayers in Dry Oxygen

The oxidation of GaN epilayers in dry oxygen

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs

Oxygen annealing induced crystallization and cracking of pulsed laser deposited Ga2O3 films

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Equivalent Oxide Thickness Scaling of Al2o3/Ge Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation

Low-temperature growth of Ga2O3 thin films on Si substrates by metal organic chemical vapor deposition and their electrical characteristics

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors