Effects of preparation parameters on growth and properties of -Ga<sub>2</sub>O<sub>3</sub> film
Zi-Hao Chen,Yong-Sheng Wang,Ning Zhang,Bin Zhou,Jie Gao,Yan-Xia Wu,Yong Ma,Hong-Jun Hei,Yan-Yan Shen,Zhi-Yong He,Sheng-Wang Yu
DOI: https://doi.org/10.1088/1674-1056/ac728c
2023-01-01
Chinese Physics B
Abstract:The Ga2O3 films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties (e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the beta-Ga2O3 film are influenced by those parameters. All beta-Ga(2)O(3)films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I-V curves show that the Ohmic behavior between metal and beta-Ga2O3 films is obtained at 900 degrees C. Those results will be helpful for the further research of beta-Ga2O3 photoelectric semiconductor.