Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

rui zhang,pochin huang,juchin lin,mitsuru takenaka,shinichi takagi
DOI: https://doi.org/10.1063/1.4794013
IF: 4
2013-01-01
Applied Physics Letters
Abstract:The ultrathin GeOx/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al2O3/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeOx layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of similar to 0.3 nm with an increase in the GeOx thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of similar to 0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeOx/Ge interfaces on Ge (100) and (111) surfaces. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794013]
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