Abstract:Cobalt oxide (CoO and Co3O4) films with good crystallinity are successfully synthesized by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) and H2O/O3. Both films exhibit smooth surface, good uniformity, and low resistivity. Density functional theory calculations (enthalpy change) demonstrate that the film growth is greatly affected by the oxidability of co‐reactants during the deposition process.Cobalt oxides (CoxOy) have shown great potential for applications in catalysts, sensors, and energy storage fields, and their performance remarkably depends on their oxidation states. Herein, CoxOy films with precisely controlled composition are first introduced by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) as Co precursor and H2O/O3 as oxidants. The results show that the ALD processes using both oxidants exhibit typical self‐limiting characteristic, where cubic‐CoO films, with growth rate of 0.045 nm per cycle, are obtained at 150–200 °C using H2O oxidant, while cubic‐Co3O4 films, with growth rate of 0.05 nm per cycle, can be deposited at 200–225 °C using O3 oxidant. Both CoO and Co3O4 films show dense, smooth microstructure, and good crystallinity with typical columnar crystal feature, where the Co3O4 film shows smaller columnar size because the O3 promotes rapid nucleation with relatively higher density of nucleation sites. The thermodynamic growth mechanism of ALD process is established via density functional theory calculations, which demonstrates that the exothermic reaction path of O3 is more energetically than that of H2O. Both films possess relatively low resistivity of ≈10−1 Ω cm−1 with p‐type semiconductor behavior, which shows promising application potentials of these films.

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Hysteresis-free HfO2 Film Grown by Atomic Layer Deposition at Low Temperature

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

Atomic Layer Deposition of Co x O y Films: Oxidants versus Composition

Epitaxial Growth and Characterization of Gd2O3-doped HfO2 Film on Ge (001) Substrates with Zero Interface Layer

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications