Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

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Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Phase Separation Enhanced Interfacial Reactions in Complex High-K Dielectric Films

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

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Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

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Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Hfo2/Al2o3 Nanolaminate Structure on Si

The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

Atomic Layer Deposition of High Quality HfO2 Using In-Situ Formed Hydrophilic Oxide As an Interfacial Layer

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Growth and Interface of Amorphous La2Hf2O7/Si Thin Film

Preparation of High-Quality Hf-Aluminate Films by Eb-Pvd

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method