Abstract:Two kinds of Zr-rich Zr-aluminate films for high-kappa gate dielectric applications with the nominal composition of (ZrO2)(0.8)(Al2O3)(0.2) and (ZrO2)(0.9)(Al2O3)(0.1), were deposited on n-type silicon wafer by pulsed laser deposition (PLD) technique at different deposition conditions. X-ray diffraction (XRD) reveals that the (ZrO2)(0.8)(Al2O3)(0.2) film could remain amorphous after being rapid thermal annealed (RTA) at the temperature above 800 degrees C, while the other one displays some crystalline peaks at 700 degrees C. The energy gap calculated from optical transmittance spectrum of (ZrO2)(0.8)(Al2O3)(0.2) film on quartz is about 6.0 eV. Sputtering depth profile of X-ray photoelectron spectroscopy and Auger electron spectroscopy indicate that a Zr-Si-O interfacial layer was formed at the near surface of the silicon substrate. The dielectric constant of the (ZrO2)(0.8)(Al2O3)(0.2) film has been determined to be 22.1 by measuring a Pt/(ZrO2)(0.8)(Al2O3)(0.2)/Pt MIM structure. An EOT of 1.76 nm with a leakage current density of 51.5 mA/cm(2) at 1 V gate voltage for the film deposited in N-2 were obtained. Two different pre-treatments of Si substrates prior to depositions were also carried out and compared. The results indicate that a surface-nitrided Si substrate can lead to a lower leakage current density. The amorphous Zr-rich Zr-aluminate films fabricated by PLD have promising structure and dielectric properties required for it candidate material for high-kappa Late dielectric applications. (c) 2005 Elsevier B.V. All rights reserved.

Phase Separation Enhanced Interfacial Reactions in Complex High-K Dielectric Films

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

INTERFACIAL MICROSTRUCTURE OF HIGH-κ DIELECTRIC CaZrOx FILMS DEPOSITED BY PULSE LASER DEPOSITION IN LOW OXYGEN PRESSURE

Interfacial Properties of High-K Dielectric Cazrox Films Deposited by Pulsed Laser Deposition

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition

Phase Separation of Alkaline Earth Fluorosilicate Glass: A Strategy to Suppress Fluoride Evaporation

Modeling Phase Separation Mechanisms in Oxy‐fluoride Glass‐ceramics Containing SrF2:Ln3+ and ZnAl2O4:Cr3+ Nanocrystals

Microstructure and Electrical Properties of Al2O3–ZrO2 Composite Films for Gate Dielectric Applications

Thickness Dependence of the Crystallization and Phase Transition in ZrO 2 Thin Films