Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

M. Zhu,J. Zhu,J.M. Liu,Z.G. Liu

DOI: https://doi.org/10.1007/s00339-003-2107-7

2005-01-01

Abstract:Thin films of zirconium silicate ZrxSi1-xO2 (with x=0.69), a material that has been suggested as a possible high-k dielectric, are deposited on silicon wafers by pulsed laser deposition (PLD) under different deposition and post-annealing conditions. The morphology and electrical properties of these films are characterized. It is shown that the films remain amorphous after an ex situ rapid thermal annealing (RTA) at temperatures as high as 800 °C. For the ∼6 nm thick film deposited at 300 °C in an O2 ambient with a N2 ambient post-RTA at 500 °C for 5 min, the equivalent oxide thickness (EOT) is ∼1.9 nm, as evaluated from capacitance-voltage (C–V) measurements. The samples prepared with the N2 ambient post-RTA show a slightly higher leakage current than that for samples annealed in the O2 ambient. For the films deposited in N2, the smallest EOT of ∼1.1 nm is obtained, and the films have fair electrical properties in spite of the high interface state density and relatively higher leakage.