Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

X. Y. Qiu,H. W. Liu,F. Gao,J. -M. Liu
DOI: https://doi.org/10.1063/1.2356786
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:The thermal stability and interfacial properties of amorphous ZrAlxSiyOz films prepared under high vacuum conditions by pulse-laser deposition are investigated. A high anticrystallization temperature of 916°C is identified by x-ray diffraction and differential scanning calorimeter. However, it is found that ZrOx clusters may precipitate from amorphous film matrix at a temperature as low as 700°C, which subsequently react with Si substrate to form amorphous Zr-silicide interfacial layer. Due to the conductivity and good interfacial morphology of amorphous Zr-silicide interfacial layer, the Pt∕ZrAlxSiyOz∕IL∕Si stack gate structures exhibit good electrical properties such as small equivalent oxide thickness of 0.9nm, flatband voltage of 0.43V, and low leakage density of 64mA∕cm2 at 1V gate voltage.
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