Abstract:Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO2 with a high-k material (ZrO2) as the gate oxygen layer to investigate its effect on the electrical characteristics of the devices. In particular ZrO2 films were deposited on Si and SiC substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with R-q < 1 nm after the ALD growth of ZrO2 layer. The sample surface analysis via x-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrOx components. According to the electron energy loss spectrum (EELS), the band gap width (E-g) of this ALD ZrO2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown voltage of the Al/ZrO2/SiC/Al MOS structure was obtained to be 23 V, i.e., nearly twice that of the Si substrate. As for the oxide layer, the interface defect density (D-it) near the conduction band of the Al/ZrO2/SiC/Al MOS structure was only 10(12) eV(-1) cm(-2) orders of magnitude. The N-eff value (the movable charge) of the structure was also controlled at 10(12) cm(-2). Therefore, the overall performance of the ZrO2/SiC structure in terms of electrical properties exceeded that of the ZrO2/Si structure and previously reported counterparts. In this respect, the ZrO2/SiC MOS capacitor structure has great research potential.

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition

Pulsed Laser Deposited Zralon Films for High-K Gate Dielectric Applications

Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications

Dielectric Properties of SrZrO3 Thin Films Prepared by Pulsed Laser Deposition

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Microstructure and Electrical Properties of Al2O3–ZrO2 Composite Films for Gate Dielectric Applications

Dielectric properties of Zr–Sn–Ti–O thin films prepared by pulsed laser deposition

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Enhanced Dielectric Properties of ZrO2thin Films Prepared in Nitrogen Ambient by Pulsed Laser Deposition

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Dielectric Properties of Lead Lanthanum Zirconate Stanate Titanate Antiferroelectric Thin Films Prepared by Pulsed Laser Deposition

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Atomic Layer Deposition Deposited High Dielectric Constant (κ) ZrAlOx Gate Insulator Enabling High Performance ZnSnO Thin Film Transistors

Structural, Optical and Electrical Properties of High-K ZrO2 Dielectrics on Si Prepared by Plasma Assisted Pulsed Laser Deposition

The Thermal Stability of Zirconium Aluminate High-K Film on Strained SiGe Layer