Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

X.Y. Qiu,H.W. Liu,F. Fang,M.J. Ha,X.H. Zhou,J.-M. Liu
DOI: https://doi.org/10.1007/s00339-004-3147-3
2005-01-01
Applied Physics A: Materials Science and Processing
Abstract:The thermal stability and dielectric properties of amorphous CaZrO x film prepared by pulsed laser deposition (PLD) have been investigated. X-ray diffraction (XRD) investigation shows that CaZrO x film still remains amorphous after rapid thermal annealing at 700 °C for 10 min. Differential thermal analysis (DTA) indicates that the crystallization temperature of CaZrO x film is about 729.53 °C, which is significantly higher than that of amorphous ZrO 2 films prepared at the similar conditions. High-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS) analysis reveal there exists a Si-O transition layer between the CaZrO x film and Si substrate. The permittivity of CaZrO x film is about 10.5 (at 1 MHz) by measuring a Pt/CaZrO x /Pt MIM structure. Under the optimized conditions, a small EOT=0.91 nm and a leakage current density of 125 mA/cm 2 at 1 V gate voltage were obtained. The enhanced thermal stability and improved electrical characteristics suggest that the amorphous CaZrO x film may be an attractive gate dielectric alternative for next generation MOS field effect transistor applications.
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