Abstract:High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively constant deposition rate of 0.125 nm/cycle is obtained within the ALD temperature window of 200-250 °C. The film thickness can be precisely controlled by regulating the number of ALD cycle. The ZrO2 films formed at 200-250 °C have an O/Zr atomic ratio of 1.85-1.9 and a low content of carbon impurity. ZrO2 film begins to crystallize in ALD process above 210 °C, and the crystal structure is changed from cubic and orthorhombic phases to monoclinic and orthorhombic phases with increasing the deposition temperature to 350 °C. Moreover, the effect of annealing temperature on dielectric properties of ZrO2 film was studied utilizing ZrO2-based MIS device. The growth of the interface layer between ZrO2 and Si substrate leads to the decrease in the capacitance and the leakage current of dielectric layer in the MIS device after 1000 °C annealing. ZrO2 film exhibits the relatively high dielectric constant of 32.57 at 100 kHz and the low leakage current density of 3.3 × 10-6 A cm-2 at 1 MV/cm.

INTERFACIAL MICROSTRUCTURE OF HIGH-κ DIELECTRIC CaZrOx FILMS DEPOSITED BY PULSE LASER DEPOSITION IN LOW OXYGEN PRESSURE

Interfacial Properties of High-K Dielectric Cazrox Films Deposited by Pulsed Laser Deposition

Phase Separation Enhanced Interfacial Reactions in Complex High-K Dielectric Films

Thermal stability and dielectric properties of ultrathin CaZrO x films prepared by pulsed laser deposition

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Interfacial and Optical Properties of Zro(2)/Si by Reactive Magnetron Sputtering

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Mechanical Properties Of Zirconia Thin Films Deposited By Filtered Cathodic Vacuum Arc

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Structural, interfacial and optical characterization of ultrathin zirconia film grown by in situ thermal oxidation of sputtered metallic Zr films

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Effects of O2/Ar Ratio on Preparation and Dielectric Properties of CaZrO3 Films by Radio Frequency (RF) Magnetron Sputtering

The Thermal Stability of Zirconium Aluminate High-K Film on Strained SiGe Layer

Formation of zirconium silicide between silicon substrate and zirconium films

Microstructure and Optical Properties of Ultra-Thin Zirconia Films Prepared by Nitrogen-Assisted Reactive Magnetron Sputtering

Characterization of Zirconium Thin Films Deposited by Pulsed Laser Deposition

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition