Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Deposition of high k ZrO2 thin films by high vacuum electron beam evaporation at room temperature

Deposition of high k ZrO/sub 2/ thin films by high vacuum electron beam evaporation at room temperature

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Mechanical Properties Of Zirconia Thin Films Deposited By Filtered Cathodic Vacuum Arc

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Preparation of high quality amorphous Al2O3 thin film on silicon and its applications

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

X-ray Diffraction and Electrical Characterization of Photo-Cvd Zirconium Oxide Layers

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

ZrO2 Films Deposited by Photo-Cvd at Low Temperatures