Preparation of high quality amorphous Al2O3 thin film on silicon and its applications

qing wan,ninglin zhang,lianwei wang,qinwo shen,chenglu lin
DOI: https://doi.org/10.1109/ICSICT.2001.982181
2001-01-01
Abstract:Al2O3 thin films were deposited on silicon substrates by high-vacuum electron-beam evaporation method at 650°C. Ferroelectric oxide (Pb(Zr0.52Ti0.48)O3) (PZT) films were prepared on the Al2O3 buffer layer by pulsed laser deposition (PLD) method at 350°C and rapid thermal annealing (RTA) at 650°C. X-ray diffraction (XRD), X-ray photoelectron spectroscopes (XPS) and atomic force microscopy (AFM) results show that high quality amorphous Al2O3 could be obtained even at temperature as high as 650°C. XRD result also indicates that highly [101]-oriented perovskite PZT can be obtained on the above mentioned Al2O3 buffer layer.
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