Preparation of PZT Thick Film by a High Speed Sol-gel Method

Jianguo Lü
2005-01-01
Abstract:Crack free dense PZT thick films with total thickness of 2.56 μm were successfully prepared by a modified sol-gel method on Pt(111)/Ti/SiO_2/Si(100) substrate. To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition. The XRD patterns show that strongly (100) oriented PZT films can be obtained when the pyrolysis temperature of 350 ℃ is applied. The SEM image of the cross-sectional microstructure of PZT films show that the films are dense and the film grains exibit an obvious columnar growth. The films exibit good dielectric properties and the P_r of the film is 15 μC/cm~2 and the E_c is 39 kV/cm.
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