The preparation and study on diagnostics of PZT thin films

REN Yu-lei,XIE Dong-zhu,XIN Yun-long
2007-01-01
Abstract:Polycrystalline Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) thin films are prepared on n-doped Si (100) substrates by electron beam e- vaporation.The morphological and structural properties are characterized by field emission scanning electron microscopy (SEM) and X-ray diffraction (XRD).The films growing at 365℃consist of preferred (101) orientation substantially.The films that are prepared at room temperature and then annealed at 380℃consist of preferred (110) orientation substantially.
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